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IXDN55N120

High Voltage IGBT with optional Diode

IXYS CORPORATION 

IXDN 55N120

IXDN 55N120 D1

Symbol

Cies

C

oes

Cres

Qg

td(on)

tr

td(off)

tf

E

on

Eoff

R

thJC

RthCK

Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

V = 25 V, V = 0 V, f = 1 MHz

CE

GE

3300

pF

500

pF

220

pF

IC = 50 A, VGE = 15 V, VCE = 0.5 VCES

Inductive load, T = 125°C

J

IC = 55 A, VGE = ±15 V,

VCE = 600 V, RG = 22 W

240

nC

100

ns

70

ns

500

ns

70

ns

8.4

mJ

6.2

mJ

Package with heatsink compound

0.28 K/W

0.1

K/W

Reverse Diode (FRED) [D1 version only]

Symbol

Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

VF

IF = 55 A, VGE = 0 V

IF = 55 A, VGE = 0 V, TJ = 125°C

2.4 2.6 V

1.9

V

IF

TC = 25°C

TC = 90°C

110 A

60 A

IRM

trr

trr

RthJC

IF = 55 A, -diF/dt = 400 A/µs, VR = 600 V

40

VGE = 0 V, TJ = 125°C

200

IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V

40

A

ns

ns

0.6 K/W

miniBLOC, SOT-227 B

M4 screws (4x) supplied

Dim.

A

B

C

D

E

F

G

H

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

Millimeter

Min.

Max.

31.50

7.80

31.88

8.20

4.09

4.29

4.09

4.29

4.09

14.91

4.29

15.11

30.12

37.80

30.30

38.20

11.68

8.92

12.22

9.60

0.76

12.60

0.84

12.85

25.15

1.98

25.42

2.13

4.95

26.54

5.97

26.90

3.94

4.42

4.72

4.85

24.59

-0.05

25.07

0.1

3.30

0.780

4.57

0.830

Inches

Min.

Max.

1.240

0.307

1.255

0.323

0.161

0.161

0.169

0.169

0.161

0.587

0.169

0.595

1.186

1.489

1.193

1.505

0.460

0.351

0.481

0.378

0.030

0.496

0.033

0.506

0.990

0.078

1.001

0.084

0.195

1.045

0.235

1.059

0.155

0.186

0.174

0.191

0.968

-0.002

0.987

0.004

0.130

19.81

0.180

21.08

© 2000 IXYS All rights reserved

2-4

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