IXDN55N120 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Lista de partido
IXDN55N120 Datasheet PDF : 4 Pages
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24
mJ
Eon 18
td(on)
120
ns
90
t
12
tr
6
Eon
60
VCE = 600V
VGE = ±15V
RG = 22W 30
TJ = 125°C
0
0
0
20 40 60 80 100 A
IC
Fig. 7 Typ. turn on energy and switching
times versus collector current
20
mJ
VCE = 600V
VGE = ±15V
Eon 15
IC = 50A
TJ = 125°C
10
5
td(on)
Eon
tr
240
ns
180
t
120
60
W 0
0
0 10 20 30 40 50 60 70 80 90 100
RG
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
120
A
100
ICM 80
60
40
RG = 22W
TJ = 125°C
VCEK < VCES
20
0
0 200 400 600 800 1000 1200 V
VCE
Fig. 11 Reverse biased safe operating area
RBSOA
IXDN 55N120
IXDN 55N120 D1
12
mJ
10
Eoff 8
600
Eoff
ns
500
td(off)
400 t
6
300
VCE = 600V
4
W VGE = ±15V 200
RG = 22
2
TJ = 125°C
tf
100
0
0
0
20
40
60
80 100 A
IC
Fig. 8 Typ. turn off energy and switching
times versus collector current
10
mJ
8
Eoff
6
VCE = 600V
VGE = ±15V
IC = 50A
TJ = 125°C
td(off)
Eoff
1500
ns
1200
t
900
4
600
2
300
W 0
tf 0
0 10 20 30 40 50 60 70 80 90 100
RG
Fig.10 Typ. turn off energy and switching
times versus gate resistor
1
K/W
0.1
ZthJC
0.01
diode
IGBT
0.001
0.0001
single pulse
0.00001
0.00001 0.0001 0.001 0.01
IXDN55N120
0.1 s 1
t
Fig. 12 Typ. transient thermal impedance
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4-4
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