LDAN222T3G Ver la hoja de datos (PDF) - Shanghai Leiditech Electronic Technology Co., Ltd

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LDAN222T3G

Common Cathode Silicon Dual Switching Diode

Shanghai Leiditech Electronic Technology Co., Ltd 

LDAN222T1G

S-LDAN222T1G

Common Cathode Silicon

Dual Switching Diode

1. FEATURES

● Fast Trr

● Low CD

● We declare that the material of product compliance with

RoHS requirements and Halogen Free.

● S- prefix for automotive and other applications requiring

unique site and control change requirements; AEC-Q101

qualified and PPAP capable.

SC89

3

CATHODE

1

ANODE

2

ANODE

2. DEVICE MARKING AND RESISTOR VALUES

Device

Marking

Shipping

LDAN222T1G

N9

3000/Tape&Reel

LDAN222T3G

N9

10000/Tape&Reel

3. MAXIMUM RATINGS(Ta = 25ºC)

Parameter

Reverse Voltage

Peak Reverse Voltage

Forward Current

Peak Forward Current

Peak Forward Surge Current(Note 1)

Symbol Limits Unit

VR

80

V

VRM

80

V

IF

100

mA

IFM

300

mA

IFSM

2

A

4. THERMAL CHARACTERISTICS

Parameter

Power Dissipation

Junction Temperature

Storage Temperature Range

1. t = 1 µS

Symbol Limits Unit

PD

150

mW

Tj

150

℃

Tstg -55~+150 ℃

Rev :01.06.2018

1/4

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