LDAN222T3G Ver la hoja de datos (PDF) - Shanghai Leiditech Electronic Technology Co., Ltd

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LDAN222T3G

Common Cathode Silicon Dual Switching Diode

Shanghai Leiditech Electronic Technology Co., Ltd 

5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)

Characteristic

Symbol

Min.

Reverse Voltage Leakage Current

(VR = 70 V)

IR

-

Forward Voltage

(IF = 100 mA)

VF

-

Reverse Breakdown Voltage

(IR = 100 µA )

VR

80

Diode Capacitance

(VR = 6.0 V, f = 1.0 MHz)

CD

-

Reverse Recovery Time

Trr

(IF = 5.0 mA, VR = 6.0 V, RL = 100 Ω, Irr = 0.1 IR)

-

LDAN222T1G

S-LDAN222T1G

Typ.

Max.

Unit

µA

-

0.1

V

-

1.2

V

-

-

pF

-

3.5

ns

-

4.0

Rev :01.06.2018

2/4

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