L9904(2002) Ver la hoja de datos (PDF) - STMicroelectronics
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L9904 Datasheet PDF : 17 Pages
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L9904
ELECTRICAL CHARACTERISTICS (continued)
Symbol
Parameter
Test Condition
tKr Rise time
VVS = 13.5V; Fig. 1
External loads at K-line:
RK = 510Ω pull up
to VVS
CK = 2.2nF to GND
tKf Fall time
tKH Switch high delay time
tKL Switch low delay time
tSH Short circuit detection time
VVS = 13.5V;
TX = LOW
VK > 0.55 · VVS
Charge pump
VCP Charge pump voltage
VVS = 8V
VVS = 13.5V
VVS = 20V
ICP Charging current
VCP= VVS + 8V
VVS = 13.5V
tCP Charging time 2)
VCP= VVS + 8V
VVS = 13.5V
CCP = 10nF
fCP Charge pump frequency
VVS = 13.5V
Drivers for external highside power MOS
VCB1
VCB2
Bootstrap voltage
RGH1L ON-resistance of SINK stage
RGH2L
VVS = 8V; ICBX = 0; VSX = 0
VVS =13.5V; ICBX = 0; VSX = 0
VVS = 20V; ICBX = 0; VSX = 0
VCBX = 8V; VSX = 0
IGHX = 50mA; TJ = 25°C
RGH1H
RGH2H
VGH1H
VGH2H
RGH1
RGH2
RS1
RS2
VCBX = 8V; VSX = 0
IGHX = 50mA; TJ = 125°C
ON-resistance of SOURCE stage IGHX = -50mA; TJ = 25°C
IGHX = -50mA; TJ = 125°C
Gate ON voltage (SOURCE)
VVS= VSX = 8V; IGHX = 0;
CCBX = 0.1µF
VVS = VSX = 13.5V; IGHX = 0;
CCBX = 0.1µF
VVS = VSX = 20V; IGHX = 0;
CCBX = 0.1µF
Gate discharge resistance
EN = LOW
Sink resistance
Min. Typ. Max. Unit
2
6
µs
2
6
µs
4
17
µs
4
17
µs
10
40
µs
VVS+
7V
VVS+
10V
VVS+
10V
VVS+
14V
VVS+
14V
VVS
+14V
-50
-75
µA
1.2
4
ms
250 500 750 kHz
7.5
14
V
10
14
V
10
14
V
10
Ω
20
Ω
10
Ω
20
Ω
VVS
+6.5V
VVS
+14V
VVS+
10V
VVS
+14V
VVS
+10V
VVS
+14V
10
100
kΩ
10
100
kΩ
6/17
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