STS12NF30L(1999) Ver la hoja de datos (PDF) - STMicroelectronics
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STS12NF30L Datasheet PDF : 8 Pages
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STS12NF30L
THERMAL DATA
R th j -a mb
Tj
Ts tg
(*)Thermal Resistance Junction-ambient
Maximum Operating Junction T emperature
Storage Temperature
50
150
-55 to 150
oC/W
oC
oC
(*) Mounted on FR-4 board (t ≤ 10sec)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
30
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON (∗)
Symbo l
VGS(th)
RDS(on)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 6 A
Resistance
VGS = 4.5 V ID = 6 A
Min.
1
Typ. Max.
1.6
2.5
0.0085 0.01
0.01 0.012
Unit
V
Ω
Ω
ID(o n) On State Drain Current VDS > ID(o n) x RDS(on )max
12
A
VGS = 10 V
DYNAMIC
Symbo l
gfs (∗)
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID = 6 A
Min.
Typ.
20
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0 V
2400
pF
590
pF
200
pF
2/8
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