STS12NF30L(1999) Ver la hoja de datos (PDF) - STMicroelectronics
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STS12NF30L Datasheet PDF : 8 Pages
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STS12NF30L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 15 V
ID = 6 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, see fig. 3)
VDD = 24 V ID = 12 A VGS = 4.5 V
Min.
Typ.
35
90
35
9
18
Max.
50
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
td(off)
tf
P ar am et e r
Turn-off Delay Time
Fall Time
tr (Voff)
tf
tc
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 15 V
ID = 6 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, see fig. 3)
Vclamp = 24 V
ID = 12 A
RG = 4.7 Ω
VGS = 4.5 V
(Induct ive Load, see fig. 5)
Min.
Typ.
90
45
35
35
80
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
ISD
ISDM (•)
VSD (∗)
trr
Qrr
I R RM
P ar am et e r
Source-drain Current
Source-drain Current
( pu ls ed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
ISD = 12 A VGS = 0
ISD = 12 A
VDD = 15 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, fig. 5)
Min.
Typ.
Max.
12
48
1.2
45
70
3
Unit
A
A
V
ns
nC
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
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