STS10NF30L Ver la hoja de datos (PDF) - STMicroelectronics
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STS10NF30L Datasheet PDF : 6 Pages
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STS10NF30L
N - CHANNEL 30V - 0.011Ω - 10A SO-8
STripFET™ POWER MOSFET
TYPE
V DSS
RD S( o n )
ID
STS10NF30L
30 V < 0.0135 Ω 10 A
s TYPICAL RDS(on) = 0.011 Ω
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
PRELIMINARY DATA
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique ” Single Feature
Size™ ” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
SO-8
APPLICATIONS
s DC MOTOR DRIVE
s DC-DC CONVERTERS
s BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
s POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
VDS Drain-source Volt age (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS G ate-source Voltage
ID
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(•) Drain Current (pulsed)
Ptot T otal Dissipation at Tc = 25 oC
(•) Pulse width limited by safe operating area
Value
30
30
± 20
10
6 .5
40
2 .5
Un it
V
V
V
A
A
A
W
June 2000
1/6
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