STS10NF30L Ver la hoja de datos (PDF) - STMicroelectronics
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STS10NF30L Datasheet PDF : 6 Pages
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STS10NF30L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 15 V
ID = 5 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, see fig. 3)
VDD = 24 V ID = 10 A VGS = 10 V
Min.
Typ.
25
280
25
11
12
Max.
35
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
td(off)
tf
P ar am et e r
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 15 V
ID = 5 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, see fig. 3)
Min.
Typ.
40
60
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
VSD (∗) Forward On Voltage
ISD = 10 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 10 A
VDD = 15 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, fig. 5)
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
45
52
2.3
Max.
10
40
1.2
Unit
A
A
V
ns
nC
A
3/6
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