W150NF55 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
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Lista de partido
W150NF55
STMicroelectronics
W150NF55 Datasheet PDF : 19 Pages
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STB150NF55 - STP150NF55 - STW150NF55
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage (VGS = 0)
VDGR
Drain-gate voltage (RGS = 20 kΩ)
VGS
ID(1)
ID(1)
IDM(2)
Gate- source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Ptot
Total dissipation at TC = 25°C
Derating Factor
dv/dt (3) Peak diode recovery voltage slope
EAS (4)
Single pulse avalanche energy
Tstg
Storage temperature
Tj
Max. operating junction temperature
1. Value limited by wire bonding
2. Pulse width limited by safe operating area.
3. ISD ≤120A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
4. Starting Tj = 25 °C, ID = 60A, VDD = 30V
Value
55
55
± 20
120
106
480
300
2
8
850
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Rthj-pcb Thermal resistance junction-pcb max
TJ
Maximum lead temperature for soldering
purpose(1)
1. for 10 sec. 1.6mm from case
TO-220 D2PAK TO-247
0.5
62.5
--
50
see Figure 15 and Figure 16
°C/W
°C/W
°C/W
300
°C
3/19
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