W150NF55 Ver la hoja de datos (PDF) - STMicroelectronics

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W150NF55

N-channel 55V - 0.005Ω - 120A - D2PAK/TO-220/TO-247 STripFET™ II Power MOSFET

STMicroelectronics 

STB150NF55 - STP150NF55 - STW150NF55

Electrical characteristics

Table 5. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

trr

Qrr

IRRM

Source-drain current

Source-drain current

(pulsed)

Forward on voltage

ISD = 120A, VGS = 0

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 120A,

di/dt = 100A/µs,

VDD = 25V, Tj = 150°C

(see Figure 21)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Min. Typ. Max. Unit

120 A

480 A

1.5 V

130

ns

350

nC

7.5

A

5/19

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