STS4DNF60 Ver la hoja de datos (PDF) - STMicroelectronics

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STS4DNF60

N - CHANNEL 60V - 0.045Ω - 4A SO-8 STripFET™ POWER MOSFET

STMicroelectronics 

STS4DNF60L

THERMAL DATA

Rthj-amb

Tj

Tstg

*Thermal Resistance Junction-ambient Single Operation

Dual Operation

Maximum Operating Junction Temperature

Storage Temperature

78

62.5

150

-55 to 150

oC/W

oC/W

oC

oC

(*) Mounted on FR-4 board (t ≤ 10sec)

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

OFF

Symbol

V(BR)DSS

IDSS

IGSS

Parameter

Test Conditions

Drain-source

Breakdown Voltage

ID = 250 µA VGS = 0

Zero Gate Voltage

VDS = Max Rating

Drain Current (VGS = 0) VDS = Max Rating

Tc = 125 oC

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20 V

Min.

60

Typ.

Max.

Unit

V

1

µA

10

µA

± 100 nA

ON (∗)

Symbol

VGS(th)

RDS(on)

Parameter

Test Conditions

Gate Threshold Voltage VDS = VGS ID = 250 µA

Static Drain-source On VGS = 10 V ID = 2 A

Resistance

VGS = 4.5 V ID = 2 A

Min.

1

Typ.

1.7

0.045

0.05

Max.

2.5

0.055

0.065

Unit

V

Ω

Ω

ID(on) On State Drain Current VDS > ID(on) x RDS(on)max

20

A

VGS = 10 V

DYNAMIC

Symbol

gfs (∗)

Ciss

Coss

Crss

Parameter

Forward

Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS > ID(on) x RDS(on)max ID = 2 A

Min.

Typ.

7

Max.

Unit

S

VDS = 25 V f = 1 MHz VGS = 0 V

1250

pF

130

pF

26

pF

2/5

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