STS4DNF60 Ver la hoja de datos (PDF) - STMicroelectronics
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STS4DNF60 Datasheet PDF : 5 Pages
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STS4DNF60L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 15 V
RG = 4.7 Ω
ID = 2 A
VGS = 4.5 V
Min.
Typ.
TBD
Max.
TBD
Unit
ns
ns
Qg
Total Gate Charge
VDD = 48 V ID = 4 A VGS = 4.5 V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
15
25
nC
4
nC
4
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 48 V ID = 4 A
RG = 4.7 Ω VGS = 4.5 V
Min.
Typ.
TBD
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 4 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 4 A
Vr = 20 V
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ.
Max.
4
16
Unit
A
A
1.2
V
TBD TBD ns
nC
A
3/5
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