IRFZ44 Ver la hoja de datos (PDF) - Philips Electronics
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IRFZ44 Datasheet PDF : 8 Pages
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Philips Semiconductors
N-channel enhancement mode
TrenchMOSTM transistor
Product specification
IRFZ44N
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
ID = 45 A; VDD ≤ 25 V;
VGS = 10 V; RGS = 50 Ω; Tmb = 25 ˚C
MIN.
-
TYP.
-
MAX. UNIT
110 mJ
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Tmb)
ID%
120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V
1000
ID/A
100
RDS(ON) =VDS/ID
DC
10
tp =
1 us
10us
100 us
1 ms
10ms
100ms
1
1
10
VDS/V
100
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
10 Zth/(K/W)
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01 0
PD
tp
D
=
tp
T
T
t
0.001
1E-06
0.0001
0.01
1
100
t/s
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
February 1999
3
Rev 1.000
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