IRFZ44ZS Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Lista de partido

IRFZ44ZS

HEXFET® Power MOSFET

International Rectifier 

IRFZ44Z/S/L

Static @ TJ = 25°C (unless otherwise specified)

V(BR)DSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

Parameter

Min.

Drain-to-Source Breakdown Voltage 55

Breakdown Voltage Temp. Coefficient –––

Static Drain-to-Source On-Resistance –––

Gate Threshold Voltage

2.0

Typ. Max.

––– –––

0.054 –––

11.1 13.9

––– 4.0

Units

Conditions

V VGS = 0V, ID = 250µA

f V/°C Reference to 25°C, ID = 1mA

mΩ VGS = 10V, ID = 31A

V VDS = VGS, ID = 250µA

gfs

Forward Transconductance

22 ––– ––– S VDS = 25V, ID = 31A

IDSS

Drain-to-Source Leakage Current

––– ––– 20 µA VDS = 55V, VGS = 0V

––– ––– 250

VDS = 55V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 200 nA VGS = 20V

Gate-to-Source Reverse Leakage

––– ––– -200

VGS = -20V

Qg

Total Gate Charge

––– 29 43 nC ID = 31A

Qgs

Qgd

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

––– 7.2 11

––– 12 18

f VDS = 44V

VGS = 10V

td(on)

Turn-On Delay Time

––– 14 ––– ns VDD = 28V

tr

Rise Time

––– 68 –––

ID = 31A

td(off)

tf

Turn-Off Delay Time

Fall Time

––– 33 –––

––– 41 –––

f RG = 15Ω

VGS = 10V

LD

Internal Drain Inductance

––– 4.5 ––– nH Between lead,

D

6mm (0.25in.)

LS

Internal Source Inductance

––– 7.5 –––

from package

G

Ciss

Coss

Crss

Coss

Coss

Coss eff.

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Output Capacitance

Effective Output Capacitance

––– 1420 –––

––– 240 –––

––– 130 –––

––– 830 –––

––– 190 –––

––– 300 –––

and center of die contact

S

pF VGS = 0V

VDS = 25V

ƒ = 1.0MHz, See Fig. 5

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

VGS = 0V, VDS = 44V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 44V

Diode Characteristics

Parameter

IS

Continuous Source Current

Min. Typ. Max. Units

Conditions

––– ––– 51

MOSFET symbol

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

––– ––– 200

––– ––– 1.2

––– 23 35

––– 17 26

A showing the

D

integral reverse

f p-n junction diode.

G

V TJ = 25°C, IS = 31A, VGS = 0V

S

f ns TJ = 25°C, IF = 31A, VDD = 28V

nC di/dt = 100A/µs

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

‚ Limited by TJmax, starting TJ = 25°C, L =0.18mH,

RG = 25Ω, IAS = 31A, VGS =10V. Part not

recommended for use above this value.

ƒ ISD ≤ 31A, di/dt ≤ 840A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C.

„ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

… Coss eff. is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS .

† Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive

avalanche performance.

‡ This value determined from sample failure population. 100%

tested to this value in production.

ˆ This is applied to D2Pak, when mounted on 1" square PCB

( FR-4 or G-10 Material ). For recommended footprint and

soldering techniques refer to application note #AN-994.

‰ Rθ is rated at TJ of approximately 90°C.

2

www.irf.com

Share Link: