IRFZ44ZS Ver la hoja de datos (PDF) - International Rectifier

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IRFZ44ZS

HEXFET® Power MOSFET

International Rectifier 

IRFZ44Z/S/L

55

50

45

40

35

30

25

20

15

10

5

0

25

50 75 100 125 150 175

TC , Case Temperature (°C)

Fig 9. Maximum Drain Current vs.

Case Temperature

2.5

ID = 31A

VGS = 10V

2.0

1.5

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 10. Normalized On-Resistance

vs. Temperature

10

1 D = 0.50

0.20

0.10

0.1

0.05

0.02

0.01

0.01

0.001

1E-006

SINGLE PULSE

( THERMAL RESPONSE )

τJ τJ

τ1 τ1

R1R1

Ci= τi/Ri

Ci i/Ri

R2R2

τ2 τ2

R3R3 Ri (°C/W) τi (sec)

τCτ 0.8487 0.00044

τ3 τ3

0.6254 0.00221

0.3974 0.01173

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

1E-005

0.0001

0.001

0.01

0.1

1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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