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RMWB12001

12 GHZ Buffer Amplifier MMIC

Raytheon Company 

RMWB12001

12 GHZ Buffer Amplifier MMIC

Recommended

Procedure

for Biasing and

Operation

PRODUCT INFORMATION

CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE

AMPLIFIER CHIP.

The following sequence of steps must be followed to properly test the amplifier.

Step 1: Turn off RF input power.

Step 2: Connect the DC supply grounds to the grounds

of the chip carrier. Slowly apply negative gate

bias supply voltage of -1.5 V to Vg.

Step 3: Slowly apply positive drain bias supply voltage

of +4 V to Vd.

Step 4: Adjust gate bias voltage to set the quiescent

current of Idq=96 mA.

Step 5: After the bias condition is established, RF input

signal may now be applied at the appropriate

frequency band.

Step 6: Follow turn-off sequence of:

(i) Turn off RF input power,

(ii) Turn down and off drain voltage (Vd),

(iii) Turn down and off gate bias voltage (Vg).

Performance

Data

RMWB12001 12 GHz BA, Typical Small Signal Performance

On-Wafer Measurements, Vd=4 V, Idq= 96 mA

30

0

28

-5

S21

26

-10

S11

24

-15

S22

22

-20

20

-25

8.5

9.0

9.5

10.0

10.5

11.0

11.5

12.0

Frequency (GHz)

www.raytheon.com/micro

Characteristic performance data and specifications are subject to change without notice.

Revised March 14, 2001

Page 4

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

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