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P4C164-10JI

ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS

Performance Semiconductor 

P4C164/164L

POWER DISSIPATION CHARACTERISTICS VS. SPEED

Symbol

Parameter

Temperature

Range

Commercial

ICC Dynamic Operating Current* Industrial

Military

–8 –10 –12 –15 –20 –25 –35

200 180 170 160 155 150 N/A

N/A 190 180 170 160 155 150

N/A N/A 180 170 160 155 150

*VCC = 5.5V.

Tested with outputs open.

f = Max.

Switching inputs are 0V and 3V.

CE

1

=

VIL,

CE2

=

VIH,

OE

=

VIH

–45 Unit

N/A mA

N/A mA

145 mA

DATA RETENTION CHARACTERISTICS (P4C164L, Military Temperature Only)

Symbol

Parameter

Test Condition

Min

VDR

ICCDR

tCDR

VCC for Data Retention

Data Retention Current

Chip Deselect to

Data Retention Time

2.0

CE1 ≥ VCC – 0.2V or

CE2 ≤ 0.2V, VIN ≥ VCC – 0.2V

or VIN ≤ 0.2V

0

tR†

Operation Recovery Time

tRC§

*T

A

=

+25°C

§tRC = Read Cycle Time

†This parameter is guaranteed but not tested.

Typ.*

V=

CC

2.0V 3.0V

10

15

Max

V=

CC

2.0V 3.0V

200 300

Unit

V

µA

ns

ns

DATA RETENTION WAVEFORM

VCC

CE1

CE2

DATA RETENTION MODE

t CDR

4.5V

VDR ≥ 2V

4.5V

tR

VHC

VDR

VHC

VLC

VLC

93

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