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Número de pieza(s) : K4S561632A K4S561632A-TC/L1H K4S561632A-TC/L1L K4S561632A-TC/L75 K4S561632A-TC/L80 K4S561632A-TC
Samsung
componentes Descripción : 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
Número de pieza(s) : K4S561632B K4S561632B-TC/L1H K4S561632B-TC/L1L K4S561632B-TC/L75 K4S561632B-TC
Samsung
componentes Descripción : 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
Número de pieza(s) : K4S561632C K4S561632C-L1H K4S561632C-L1L K4S561632C-L60 K4S561632C-L75 K4S561632C-L7C K4S561632C-TC K4S561632C-TC/L1H K4S561632C-TC/L1L K4S561632C-TC/L60
Samsung
componentes Descripción : 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
Número de pieza(s) : K4S561632D K4S561632D-TC/L1H K4S561632D-TC/L75 K4S561632D-TCL1H K4S561632D-TC/L1L K4S561632D-TC/L60 K4S561632D-TC75000 K4S561632D-TC/L7C K4S561632D-TC
Samsung
componentes Descripción : 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
Número de pieza(s) : K4S560832B K4S560832B-TC K4S560832B-TC/L75 K4S560832B-TC/L1H K4S560832B-TC/L1L
Samsung
componentes Descripción : 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
Número de pieza(s) : K4S560432A K4S560432A-TC/L1H K4S560432A-TC/L1L K4S560432A-TC/L75 K4S560432A-TC/L80 K4S560432A-TC
Samsung
componentes Descripción : 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
Número de pieza(s) : HY57V561620C HY57V561620CL-I HY57V561620CLT-6I HY57V561620CLT-8I HY57V561620CLT-HI HY57V561620CLT-I HY57V561620CLT-KI HY57V561620CLT-PI HY57V561620CLT-SI HY57V561620CT-6I
Hynix Semiconductor
componentes Descripción : 4 Banks x 4M x 16bit Synchronous DRAM
Número de pieza(s) : K4S560432B-TC/L75 K4S560432B-TC K4S560432B-TC/L1L K4S560432B-TC/L1H K4S560432B
Samsung
componentes Descripción : 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
Número de pieza(s) : K4S560832A K4S560832A-TC K4S560832A-TC/L75 K4S560832A-TC/L80 K4S560832A-TC/L1H K4S560832A-TC/L1L
Samsung
componentes Descripción : 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
Número de pieza(s) : K4S560832C K4S560832C-TC/L1H K4S560832C-TC/L1L K4S560832C-TC/L75 K4S560832C-TC/L7C K4S560832C-TC
Samsung
componentes Descripción : 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
Número de pieza(s) : K4S560832D K4S560832D-TC/L1H K4S560832D-TC/L1L K4S560832D-TC/L75 K4S560832D-TC/L7C K4S560832D-TC1H K4S560832D-TC1L K4S560832D-TC75 K4S560832D-TC7A K4S560832D-TC7C
Samsung
componentes Descripción : 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
Número de pieza(s) : HY57V561620B-I HY57V561620BLT-6I HY57V561620BLT-8I HY57V561620BLT-HI HY57V561620BLT-I HY57V561620BLT-KI HY57V561620BLT-PI HY57V561620BLT-SI HY57V561620BT-6I HY57V561620BT-8I
Hynix Semiconductor
componentes Descripción : 4 Banks x 4M x 16bit Synchronous DRAM
Número de pieza(s) : HY57V561620B HY57V561620BL/ST-6 HY57V561620BL/ST-7 HY57V561620BL/ST-8 HY57V561620BL/ST-H HY57V561620BL/ST-K HY57V561620BL/ST-P HY57V561620BL/ST-S HY57V561620BLT HY57V561620BLT-6
Hynix Semiconductor
componentes Descripción : 4 Banks x 4M x 16bit Synchronous DRAM
Número de pieza(s) : HY57V561620CLT HY57V561620CLTP HY57V561620CT HY57V561620CTP HY57V561620CLT-6 HY57V561620CLT-7 HY57V561620CLT-K HY57V561620CLT-H HY57V561620CLT-8 HY57V561620CLT-P
Hynix Semiconductor
componentes Descripción : 4 Banks x 4M x 16bit Synchronous DRAM
Número de pieza(s) : K4S640432D-TC K4S640432D K4S640432D-TC/L75 K4S640432D-TC/L80 K4S640432D-TC/L1H K4S640432D-TC/L1L K4S640432D-TC/L10
Samsung
componentes Descripción : 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL
Número de pieza(s) : K4S640432E-L1H K4S640432E-L1L K4S640432E-L75 K4S640432E K4S640432E-TC
Samsung
componentes Descripción : 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL
Número de pieza(s) : K4S640432F K4S640432F-TC1H K4S640432F-TC1L K4S640432F-TC75 K4S640432F-TL1H K4S640432F-TL1L K4S640432F-TL75
Samsung
componentes Descripción : 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL
Número de pieza(s) : HYS64V64220GBDL HYS64V64220GBDL-7-D HYS64V64220GBDL-7.5-D HYS64V64220GBDL-8-D HYS64V64220GBDL-75-D
Infineon Technologies
componentes Descripción : 144 pin SO-DIMM SDRAM Modules
Número de pieza(s) : HYS72V4120GU-10 HYS64V4120GU HYS64V4120GU-10
Siemens AG
componentes Descripción : 3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules
Número de pieza(s) : HYB39S256160T-8B HYB39S256400T-8 HYB39S256160T-8 HYB39S256160T-8A PC100-222-620 HYB39S256800T-8A HYB39S256400T HYB39S256800T HYB39S256400T-8A HYB39S256800T-8B
Infineon Technologies
componentes Descripción : 256 MBit Synchronous DRAM