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HYS72V4120GU-10 Hoja de datos - Siemens AG

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HYS72V4120GU-10

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Siemens
Siemens AG Siemens

3.3V 4M x 64-Bit 2 BANK SDRAM Module
3.3V 4M x 72-Bit 2 BANK SDRAM Module
168 pin unbuffered DIMM Modules

The HYS64(72)V4120GU-10 are industry standard 168-pin 8-byte Dual in-line Memory Modules (DIMMs) which are organised as 4M x 64 and 4M x 72 in two banks high speed memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use 16 2M x 8 SDRAMs for the 4M x 64 organisation and additional two SDRAMs for the 4M x 72 organisation. Decoupling capacitors are mounted on the PC board.

• 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module for PC main memory applications
• 2 bank 4M x 64, 4M x 72 organisation
• Optimized for byte-write non-parity or ECC applications
• Fully PC66 layout compatible
• JEDEC standard Synchronous DRAMs (SDRAM)
• Performance:
• Single +3.3V(± 0.3V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• Utilizes 16 / 18 2M x 8 SDRAMs in TSOPII-44 packages
• 4096 refresh cycles every 64 ms
• Gold contact pad
• Card Size: 133,35 mm x 29.21 mm x 4,00 mm for HYS64(72)V4120GU

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Número de pieza
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