Fabricante
![WXDH](/logo/WXDH.png)
Jiangsu Donghai Semiconductor Technology Co.,Ltd
![WXDH](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
Description
These silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
FEATUREs
● Fast Switching
● Low ON Resistance(Rdson≤0.9Ω)
● Low Gate Charge(Typical Data:32nC)
● Low Reverse Transfer Capacitances(Typical:7.5pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
APPLICATIONs
● Used in Various Power Switching Circuit for System
Miniaturization and Higher Efficiency.
● Power Switch Circuit of Adaptor and Charger.
Número de pieza
componentes Descripción
PDF
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