Description
This Power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

FEATUREs
◾ RDS(on)=0.85Ω @ VGS=10V
◾ Low gate charge ( typical 63nC)
◾ High ruggedness
◾ Fast switching capability
◾ Avalanche energy specified
◾ Improved dv/dt capability
◾ ESD improved capability