16N50H Hoja de datos - KIA Semiconductor Technology
Número de pieza
16N50H
componentes Descripción
Other PDF
no available.
PDF
page
6 Pages
File Size
323.5 kB
Fabricante
KIA Semiconductor Technology
Description
This power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
◾ RDS(on)=0.32Ω @ VGS=10V
◾ Low gate charge ( typical 45nC)
◾ Fast switching capability
◾ Avalanche energy specified
◾ Improved dv/dt capability
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