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1N3595

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New Jersey Semiconductor NJSEMI

The 1N3595 high conductance extremely low leakage planar diode. Specified maximum values for voltage drop capacitance and leakage current mean flexibility in designing circuits which require large numbers of diodes. In those applications where reverse current is a critical design parameter the inherent qualities of the Fairchild process eliminates the problem of leakage degradation.

The USN 1N3595 is supplied in accordance wih MIL-S-19500/241A (NAVY). The electrical specifications, as listed in Table III, are identical with those liested in this Military Specification.


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