1N5408B0G Hoja de datos - Taiwan Memory Technology
Número de pieza
1N5408B0G
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4 Pages
File Size
161.3 kB
Fabricante
Taiwan Memory Technology
FEATURES
- High efficiency, Low VF
- High current capability
- High reliability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
Número de pieza
componentes Descripción
PDF
Fabricante
1A, 50V - 1000V Silicon Rectifiers ( Rev : V_F15 )
Shenzhen Luguang Electronic Technology Co., Ltd
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