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1N5711 Hoja de datos - General Semiconductor

1N5711 image

Número de pieza
1N5711

componentes Descripción

Other PDF
  no available.

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page
2 Pages

File Size
100 kB

Fabricante
GE
General Semiconductor GE

Features
• For general purpose applications
• Metal-on-silicon Schottky barrier device which is
   protected by a PN junction guard ring. The low for
   ward voltage drop and fast switching make it ideal
   for protection of MOS devices, steering, biasing
   and coupling diodes for fast switching and low
   logic level applications.
• This diode is also available in the MiniMELF case
   with type designation LL5711 and LL6263.

Page Link's: 1  2 

Número de pieza
componentes Descripción
PDF
Fabricante
SCHOTTKY DIODES SCHOTTKY BARRIER DIODES
Ver
AiT Semiconductor Inc.
Schottky Diodes
Ver
KEXIN Industrial
Schottky Diodes
Ver
KEXIN Industrial
Schottky Diodes
Ver
KEXIN Industrial
Schottky Diodes
Ver
KEXIN Industrial
Schottky Diodes
Ver
Fairchild Semiconductor
Schottky Diodes
Ver
General Semiconductor
Schottky Diodes
Ver
KEXIN Industrial
Schottky Diodes
Ver
[Zhaoxingwei Electronics ., Ltd
Schottky Diodes
Ver
General Semiconductor

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