1N6638US Hoja de datos - Compensated Devices => Microsemi
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1N6638US
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Compensated Devices => Microsemi
• 1N6638US,1N6642US, 1N6643US AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/578
• 1N6638U,1N6642U, 1N6643U AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/578
• SWITCHING DIODES
• NON-CAVITY GLASS PACKAGE
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 300 mA
Derating: 4.6 mA/°C Above TEC = + 110°C
Surge Current: IFSM = 2.5A, half sine wave, Pw = 8.3ms
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