LOW REVERSE LEAKAGE SCHOTTKY DIODE
100 Volts 25 Amps

FEATUREs
•  Tungsten schottky barrier
•  Oxide passivated structure
•  Guard ring protection for increased reverse energy capability
•  Epitaxial structure minimizes forward voltage drop
•  Hermetically sealed, low profile ceramic surface mount power package
•  Low package inductance
•  Very low thermal resistance
•  Available as standard polarity (strap is anode: 1N6817) and reverse polarity (strap is cathode: 1N6817R)
•  TXV-level screening (MSASC25W100KV) or S-level (MSASC25W100KS) screening i.a.w. Microsemi internal procedure PS11.50 available