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1SS293 Hoja de datos - Toshiba

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Número de pieza
1SS293

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3 Pages

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171.2 kB

Fabricante
Toshiba
Toshiba Toshiba

Low Voltage High Speed Switching

  Low forward voltage  : VF (3)= 0.54V (typ.)
  Low reverse surrent  : IR = 5μA (max)
  Small package

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type ( Rev : 2007 )
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Ver
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type ( Rev : 2014 )
Ver
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Ver
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type ( Rev : 2007 )
Ver
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Ver
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Ver
Toshiba

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