1SS387CT Hoja de datos - Toshiba
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1SS387CT
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Toshiba
Switching Diodes Silicon Epitaxial Planar
FEATUREs
(1) Small package
(2) Low forward voltage: VF(3) = 0.98 V (typ.)
(3) Fast reverse recovery time: trr= 1.6 ns (typ.)
(4) Small total capacitance: Ct = 0.5 pF (typ.)
APPLICATIONs
• Ultra-High-Speed Switching
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