Fabricante
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45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs
and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
FEATUREs
45A, 1200V, TC = 25oC
1200V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . 300ns at TJ = 150oC
Short Circuit Rating
Low Conduction Loss
Número de pieza
componentes Descripción
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Fabricante
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