Description
The KIA20N50H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction.

FEATUREs
◾ RDS(on)=0.21Ω @ VGS=10V
◾ Low gate charge ( typical 70nC)
◾ Fast switching capability
◾ Avalanche energy specified
◾ Improved dv/dt capability