20N60M2EP Hoja de datos - STMicroelectronics
Número de pieza
20N60M2EP
componentes Descripción
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no available.
PDF
page
14 Pages
File Size
282.1 kB
Fabricante
STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.
FEATUREs
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
• Tailored for very high frequency converters (f > 150 kHz)
Número de pieza
componentes Descripción
PDF
Fabricante
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