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2EDF7175F(2018) Hoja de datos - Infineon Technologies

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Número de pieza
2EDF7175F

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2 Pages

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233.9 kB

Fabricante
Infineon
Infineon Technologies Infineon

Overview
The EiceDRIVER™ 2EDF7275F is the perfect fit for robust and stable operation for primary side control of high- and low-side MOSFETs in noisy high-power switching environments. The strong 4 A/8 A source/sink dual-channel gate drivers provide a fast turn on/off when driving high- and medium-voltage MOSFETs such as CoolMOS™ or OptiMOS™. Both output channels are individually isolated and can be flexibly deployed as floating gate drivers with very high 150 V/ns CMTI (Common Mode Noise Immunity). The VDDi input supply supports a wide voltage range SLDO mode to save on-board LDOs. For slower switching or driving smaller MOSFETs, a 1 A/2 A peak current product variant, the EiceDRIVER™ 2EDF7175F, is available in the DSO-16 narrow body package with 4 mm creepage distance.

Product key features
Fast power switching with accurate timing
› Available with 4 A/8 A and 1 A/2 A source/sink currents
› Propagation delay typ. 37 ns with 3 ns
   channel-to-channel mismatch
› Max. delay variation ~14 ns

Optimized for area and low cost system BOM
› Isolation and driver in one package
› Less power dissipation due to low on-resistance
› Output stages with 5 A reverse current capability

Robust against switching noise
› Floating drivers are able to handle large inductive
   voltage over- and undershoots
› Very high common mode transient immunity
   CMTI > 150 V/ns
› Undervoltage lockout function for switch protection

Output-to-output channel isolation
› Functional level galvanic isolation

Input-to-output channel isolation
› Functional galvanic isolation

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