2N5014 Hoja de datos - New Jersey Semiconductor
Número de pieza
2N5014
componentes Descripción
Other PDF
no available.
PDF
page
2 Pages
File Size
195.2 kB
Fabricante
New Jersey Semiconductor
FEATURES
● BACER AND BVCBO TO 1000 VOLTS
● LOW SATURATION VOLTAGE
● LOW LEAKAGE AT HIGH TMEPERATURE
● 200°C OPERATING, GOLD EUTECTIC DIE ATTACH
● 2N5010 THRU 2N5012 ALSO AVAILIABLE
Número de pieza
componentes Descripción
PDF
Fabricante
Dual Microminiature Package 800 mA 75 Volts Dual NPN Transistor
Solid State Devices, Inc.
500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
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