[multicomp]
Darlington silicon power transistors are designed for general-purpose amplifier and low speed switching applications.
Features:
• Collector-Emitter Sustaining Voltage
VCEO(sus) = 80V (Minimum).
• Collector-Emitter Saturation Voltage
VCE(sat) = 2.0V (Maximum) at IC = 5.0A.
• DC Current Gain hFE = 2500 (Typical) at IC = 4.0A.