2SA1201 Hoja de datos - Toshiba
Número de pieza
2SA1201
componentes Descripción
PDF
page
4 Pages
File Size
142.4 kB
Fabricante
Toshiba
Voltage Amplifier Applications
Power Amplifier Applications
• High voltage: VCEO = −120 V
• High transition frequency: fT = 120 MHz (typ.)
• Small flat package
• PC = 1 to 2 W (mounted on a ceramic substrate)
• Complementary to 2SC2881
Número de pieza
componentes Descripción
PDF
Fabricante
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
Share Link: