2SA1429(1997) Hoja de datos - Toshiba
Número de pieza
2SA1429
componentes Descripción
Other PDF
PDF
page
3 Pages
File Size
191.4 kB
Fabricante
Toshiba
POWER AMPLIFIER APPLICATIONS.
POWER SWITCHING APPLICATIONS.
• Low Collector Saturation Voltage
: VCE (sat) = −0.5 V (Max.) (IC = −1 A)
• High-Speed Switching: tstg = 1.0 μs (Typ.)
• Complementary to 2SC3669.
Número de pieza
componentes Descripción
PDF
Fabricante
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2007 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
Toshiba
Share Link: