2SA1680 Hoja de datos - Toshiba
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2SA1680
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4 Pages
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Toshiba
Power Amplifier Applications
Power Switching Applications
• Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)
• High collector power dissipation: PC = 900 mW (Ta = 25 °C)
• High-speed switching: tstg = 300 ns (typ.)
• Complementary to 2SC4408.
Número de pieza
componentes Descripción
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Fabricante
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
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