2SA1909 Hoja de datos - New Jersey Semiconductor
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2SA1909
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2 Pages
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71.3 kB
Fabricante
New Jersey Semiconductor
DESCRIPTION
•Collector-Emitter Breakdown Voltage V(BR)CEo=-140V(Min)
•Good Linearity of HFE
•Complement to Type 2SC5101
APPLICATIONS
•Designed for audio and general purpose applications
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