2SA877 Hoja de datos - Inchange Semiconductor
Número de pieza
2SA877
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Inchange Semiconductor
Silicon PNP Power Transistor
DESCRIPTION
·High Power Dissipation- : PC= 100W(Max.)@TC=25℃
·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -80V(Min.)
APPLICATIONS
·Designed for power amplifier and general purpose applications.
Número de pieza
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