2SB1185 Hoja de datos - New Jersey Semiconductor
Número de pieza
2SB1185
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Fabricante
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min.)
• Good Linearity of hFE
• Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max.)@ lc= -2A
• Complement to Type 2SD1762
APPLICATIONS
• Power amplifier applications.
• Driver stage amplifier applications
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