2SB1202 Hoja de datos - Jiangsu Changjiang Electronics Technology Co., Ltd
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2SB1202
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2 Pages
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286.6 kB
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Jiangsu Changjiang Electronics Technology Co., Ltd
TRANSISTOR (PNP)
FEATURES
● Adoption of FBET,MBIT Processes
● Large Current Capacity and Wide ASO
● Low Collector-to-Emitter Saturation Voltage
● Fast Switching Speed
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componentes Descripción
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Fabricante
TO-251-3L Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-251-3L Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-251-3L Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-251-3L Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-251-3L Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-251-3L Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-251-3LPlastic-EncapsulateTransistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-251-3LPlastic-EncapsulateTransistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-251-3L Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
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