2SB1260 Hoja de datos - Galaxy Semi-Conductor
Número de pieza
2SB1260
componentes Descripción
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4 Pages
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176.3 kB
Fabricante
Galaxy Semi-Conductor
FEATURES
● High breakdown voltage and high current. BVCEO=-80V,IC=-1A
● Good hFEVLinearity.
● Low VCE(sat).
● Complements the 2SD1898.
APPLICATIONS
● Epitaxial planar type PNP silicon transistor
Número de pieza
componentes Descripción
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