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2SB1261-Z Hoja de datos - Transys Electronics Limited

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2SB1261-Z

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Fabricante
TEL
Transys Electronics Limited TEL

TRANSISTOR (PNP)


FEATURES
   Power dissipation
      PCM: 2 W (Tamb=25℃)
   Collector current
      ICM: -3 A
   Collector-base voltage
      V(BR)CBO: -60 V
   Operating and storage junction temperature range
      TJ, Tstg: -55℃ to +150℃


Número de pieza
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Jiangsu Changjiang Electronics Technology Co., Ltd
TO-252-2L Plastic-Encapsulate Transistors
Ver
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-252-2L Plastic-Encapsulate Transistors
Ver
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-252 Plastic-Encapsulate PNP Transistors
Ver
Transys Electronics Limited

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