2SB1419 Hoja de datos - New Jersey Semiconductor
Número de pieza
2SB1419
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2 Pages
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86.9 kB
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New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- :V(BR)cEo=-160V(Min)
• Wide Area of Safe Operation
APPLICATIONS
• Power amplifier applications
• Optimum for the output stage of a HiFi audio amplifier
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