2SB695 Hoja de datos - New Jersey Semiconductor
Número de pieza
2SB695
componentes Descripción
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2 Pages
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89.6 kB
Fabricante
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min)
• Good Linearity of hFE
• Wide Area of Safe Operation
• Complement to Type 2SD731
APPLICATIONS
• Designed for power amplifier and general purpose applications.
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