NPN SILICON POWER TRANSISTORS

... designed for use in low frequency power amplifier applications

FEATURES:
* Low Collector-Emitter Saturation Voltage
   VCE(sat) = 1.0V (Max) @IC = 2.0A, IB = 0.2A
* DC Current Gain
   hFE = 35-320 @IC = 0.5A
* Complemenetary to PNP 2SA671