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2SC3515 Hoja de datos - Toshiba

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Número de pieza
2SC3515

Other PDF
  1997  

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6 Pages

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180.6 kB

Fabricante
Toshiba
Toshiba Toshiba

HIGH Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications

• High voltage: VCBO = 300 V, VCEO = 300 V
• Low saturation voltage: VCE (sat) = 0.5 V (max)
• Small collector output capacitance: Cob = 3 pF (typ.)
• Complementary to 2SA1384
• Small flat package
• PC = 1.0 to 2.0 W (mounted on a ceramic substrate)

 

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Número de pieza
componentes Descripción
PDF
Fabricante
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) ( Rev : 2003 )
Ver
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
Ver
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) ( Rev : 2003 )
Ver
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
Ver
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
Ver
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
Ver
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
Ver
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) ( Rev : 1997 )
Ver
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) ( Rev : 1997 )
Ver
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
Ver
Toshiba

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