2SC4595 Hoja de datos - New Jersey Semiconductor
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2SC4595
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New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
• DC Current Gain-
: hFE= 60(Min)@ (VCE= 2V, lc=2A)
• Low Saturation Voltage-
: VCE(sat)= 0.3V(Max)@ (lc= 6A, IB= 0.3A)
APPLICATIONS
• Designed for power switching applications
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